SSM6N09FU high speed switching applications small package low drain-source on resistance. : r on = 0.7 ? (max) (@v gs = 1 0 v) : r on = 1 .2 ? (max) (@v gs = 4 v) maximum ratings (ta 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 400 drain current pulse i dp 800 ma drain power dissipation (ta 25c) p d (note1) 300 mw channel temperature t ch 150 c storage temperature range t stg 55~150 c note1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32 mm 2 6) figure 1. handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm weight: 6.8 mg (typ.) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
marking equivalent circuit figure 1: 25.4 mm 25.4 mm 1.6 t, (top view) cu pad: 0.32 mm 2 6 electrical characteristics (ta 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 16 v, v ds 0 1 a drain-source breakdown voltage v (br) dss i d 1 ma, v gs 0 30 v drain cut-off current i dss v ds 30 v, v gs 0 1 a gate threshold voltage v th v ds 5 v, i d 0.1 ma 1.1 1.8 v forward transfer admittance y fs v ds 5 v, i d 200 ma (note2) 270 ms i d 200 ma, v gs 10 v (note2) 0.53 0.7 i d 200 ma, v gs 4 v (note2) 0.8 1.2 drain-source on resistance r ds (on) i d 200 ma, v gs 3.3 v (note2) 1.0 1.7 input capacitance c iss v ds 5 v, v gs 0, f 1 mhz 20 pf reverse transfer capacitance c rss v ds 5 v, v gs 0, f 1 mhz 7 pf output capacitance c oss v ds 5 v, v gs 0, f 1 mhz 16 pf turn-on time t on 72 switching time turn-off time t off v dd 5 v, i d 200 ma, v gs 0~4 v 68 ns note2: pulse test switching time test circuit (q1, q2 common) precaution v th can be expressed as voltage between gate and source when low operating current value is i d 1 00 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) v th v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 4 v or higher to turn on this product. (c) v out (b) v in t on 90% 10% 0 v 4 v 10% 90% t off t r t f v dd v ds ( on ) v dd 5 v duty 1% v in : t r , t f 5 ns (z out 50 ) common source ta 25c v dd out in 4 v 0 10 s 50 r l (a) test circuit d j 6 5 4 1 2 3 q1 q2 6 5 4 1 2 3 0.4 mm 0.8 mm SSM6N09FU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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